High-throughput synthesis and characterization methods can significantly accelerate the rate of experimental research. For physical vapor deposition (PVD), these methods include combinatorial sputtering with intentional gradients of metal/metalloid composition, temperature, and thickness across the substrate. However, many other synthesis parameters still remain out of reach for combinatorial methods. Here, we extend combinatorial sputtering parameters to include gradients of gaseous elements in thin films. Specifically, a nitrogen gradient was generated in a thin film sample library by placing two MnTe sputtering sources with different gas flows (Ar and Ar/N-2) opposite of one another during the synthesis. The nitrogen content gradient was measured along the sample surface, correlating with the distance from the nitrogen source. The phase, composition, and optoelectronic properties of the resulting thin films change as a function of the nitrogen content. This work shows that gradients of gaseous elements can be generated in thin films synthesized by sputtering, expanding the boundaries of combinatorial science.
[1]Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China;
[2]Natl Renewable Energy Lab, Mat Sci Ctr, Golden, CO 80401 USA;
[3]Oregon State Univ, Dept Phys, Corvallis, OR 97330 USA;
[4]Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA;
[5]Colorado Sch Mines, Dept Met & Mat Engn, Golden, CO 80401 USA
(8.0+极速模式)